Photoelectric Detector series

GS1102-1 GS1106-1

GS11XX Detector series have 3 models at present. Reference the specification sheet bellow. GS1106-1 spectral response range is 400nm～1100nm. The feature is fast response speed、low dark current、high reliability.

Features

●Fast response speed

●Response wavelength：400 nm～1100 nm

●Low dark current

●Low junction capacity

●High reliability

●Compact size

Application

●Laser seeker

●Laser orientation

●Other detect

Specifications

Model	Parameter	Symbol	Test condition (T_C=22±3℃)	min	Typ.	max	unit
GS1102-1	Active Diameter	D	-	-	2	-	mm
	Response Spectrum	λ	-	400	1064	1100	nm
	Responsivity	R_e	λ=850nm；V_R=15V	0.5	-	-	μA/μW
			λ=1064nm；V_R=50V	0.28	-	-	μA/μW
	Junction capacity	C_j	f=1MHz；V_R=50V	-	-	4	pF
	Rise time	T_r	λ=1064nm；V_R=50V	-	-	2	ns
	Dark current	I_d	V_R=30V	-	-	10	nA
	Reverse breakdown voltage	U_BR	I_R=10μA	150	-	-	V
GS1106-1	Active Diameter	D	-	-	6	-	mm
	Response Spectrum	λ	-	400	1064	1100	nm
	Responsivity	R_e	λ=1064nm；V_R=30V	0.25	-	-	μA/μW
	Junction capacity	C_j	f=1MHz；V_R=50V	-	-	25	pF
	Rise time	T_r	λ=1064nm；V_R=30V	-	-	15	ns
	Dark current	I_d	V_R=30V	-	-	1.5	μA
	Reverse breakdown voltage	U_BR	I_R=10μA	80	-	-	V
GS1114-1	Active Diameter	D	-	-	14	-	mm
	Response Spectrum	λ	-	400	1064	1100	nm
	Responsivity	R_e	λ=1064nm；V_R=24V	0.2	-	-	μA/μW
	Junction capacity	C_j	f=1MHz；V_R=50V	-	-	96	pF
	Rise time	T_r	λ=1064nm；V_R=50V	-	-	80	ns
	Dark current	I_d	V_R=24V	-	-	1.5	μA
	Reverse breakdown voltage	U_BR	I_R=10μA	80	-	-	V